NANOCOM

Presentation

CHARACTERIZATION PLATFORM FOR COMPONENTS AND INTEGRATED CIRCUITS

The NANOCOM platform, a member of the RF-Net network, is dedicated to the characterization of components and integrated circuits based on silicon technologies (CMOS SOI, BiCMOS SiGe) or III-V materials (InP, GaAs), using on-wafer or connectorized measurements. It enables the extraction of circuit figures of merit for devices such as LNAs, PAs, mixers, and VCOs, as well as the extraction of parameters for the modeling of passive and active components like diodes and transistors in the radiofrequency domain.

Equipped with dedicated test benches and instruments, the platform offers large-signal testing up to 170 GHz and small-signal testing up to 500 GHz. It relies on a research engineer who operates various experimental setups, representing €3 million worth of equipment over an area of approximately 200 m². NANOCOM benefits from regular investments supported by the Nouvelle-Aquitaine regional programs and European funding.